Mercha, AbdelkarimAbdelkarimMerchaRedolfi, AugustoAugustoRedolfiStucchi, MicheleMicheleStucchiMinas, NikolaosNikolaosMinasVan Olmen, JanJanVan OlmenThangaraju, SarasvathiSarasvathiThangarajuVelenis, DimitriosDimitriosVelenisDomae, ShinichiShinichiDomaeYang, YuYuYangKatti, GuruprasadGuruprasadKattiLabie, RietRietLabieOkoro, ChukwudiChukwudiOkoroZhao, MingMingZhaoAsimakopoulos, PanagiotisPanagiotisAsimakopoulosDe Wolf, IngridIngridDe WolfChiarella, ThomasThomasChiarellaSchram, TomTomSchramRohr, ErikaErikaRohrVan Ammel, AnnemieAnnemieVan AmmelJourdain, AnneAnneJourdainRuythooren, WouterWouterRuythoorenArmini, SilviaSilviaArminiRadisic, AlexAlexRadisicPhilipsen, HaroldHaroldPhilipsenHeylen, NancyNancyHeylenKostermans, MaartenMaartenKostermansJaenen, PatrickPatrickJaenenSleeckx, ErikErikSleeckxSabuncuoglu Tezcan, DenizDenizSabuncuoglu TezcanDebusschere, IngridIngridDebusschereSoussan, PhilippePhilippeSoussanPerry, DanDanPerryVan der Plas, GeertGeertVan der PlasCho, Jong HoonJong HoonChoMarchal, PolPolMarchalTravaly, YoussefYoussefTravalyBeyne, EricEricBeyneBiesemans, SergeSergeBiesemansSwinnen, BartBartSwinnen2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17620Impact of thinning and through silicon via proximity on high-k / metal gate first CMOS performanceProceedings paper