Radiation defects and carrier lifetime in tin-doped n-type silicon

Simoen, EddyEddySimoenClaeys, CorCorClaeysKraitchinskii, A. M.A. M.KraitchinskiiKras'ko, M. M.M. M.Kras'koNeimash, V. B.V. B.NeimashShpinar, L. I.L. I.Shpinar2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6831Radiation defects and carrier lifetime in tin-doped n-type siliconProceedings paper