Das, SaptarshiSaptarshiDasSebastian, AmritanandAmritanandSebastianPop, EricEricPopMcClellan, Connor J.Connor J.McClellanFranklin, Aaron D.Aaron D.FranklinGrasser, TiborTiborGrasserKnobloch, TheresiaTheresiaKnoblochIllarionov, YuryYuryIllarionovPenumatcha, Ashish V.Ashish V.PenumatchaAppenzeller, JoergJoergAppenzellerChen, ZhihongZhihongChenZhu, WenjuanWenjuanZhuAsselberghs, IngeIngeAsselberghsLi, Lain-JongLain-JongLiAvci, Uygar E.Uygar E.AvciBhat, NavakantaNavakantaBhatAnthopoulos, Thomas D.Thomas D.AnthopoulosSingh, RajendraRajendraSingh2022-06-282021-12-062022-05-132022-06-2820212520-1131WOS:000722632000008https://imec-publications.be/handle/20.500.12860/38569Transistors based on two-dimensional materials for future integrated circuitsJournal article review10.1038/s41928-021-00670-1WOS:000722632000008FIELD-EFFECT TRANSISTORSATOMIC LAYER DEPOSITIONHEXAGONAL BORON-NITRIDEHIGH-KAPPA DIELECTRICSMONOLAYER MOS2ELECTRON-MOBILITYMOLYBDENUM-DISULFIDEPERFORMANCE LIMITSCONTACT RESISTANCESCALE LENGTH