Optimized Ni oxidation in 80 nm contact holes for integration of forming-free and low-power Ni/NiO/Ni memory cells

Goux, LudovicLudovicGouxLisoni, JuditJuditLisoniWang, Xin PengXin PengWangJurczak, GosiaGosiaJurczakWouters, DirkDirkWouters2021-10-172021-10-1720090018-9383https://imec-publications.be/handle/20.500.12860/15379Optimized Ni oxidation in 80 nm contact holes for integration of forming-free and low-power Ni/NiO/Ni memory cellsJournal article