A novel model for boron diffusion in SiGe strained layers based on a kinetic driven Ge-B pairing mechanism

Villaneuva, D.D.VillaneuvaMoens, P.P.MoensKrishnasamy, RajendranRajendranKrishnasamySchoenmaker, WimWimSchoenmaker2021-10-142021-10-142001https://imec-publications.be/handle/20.500.12860/5818A novel model for boron diffusion in SiGe strained layers based on a kinetic driven Ge-B pairing mechanismProceedings paper