Cryogenic performance of ultrathin oxide CMOS capacitors with in situ doped p+ poly-Si1-xGex and poly Si gate materials

Jacob, A.P.A.P.JacobMyrberg, T.T.MyrbergNur, O.O.NurLundgren, P.P.LundgrenSveinbjornsson, E.O.E.O.SveinbjornssonYe, L.L.L.L.YeTholen, A.A.TholenCaymax, MattyMattyCaymax2021-10-142021-10-142002https://imec-publications.be/handle/20.500.12860/6426Cryogenic performance of ultrathin oxide CMOS capacitors with in situ doped p+ poly-Si1-xGex and poly Si gate materialsJournal article