Bruynsteen, CedricCedricBruynsteenAhmad, ZohauddinZohauddinAhmadda Silva, LeandroLeandroda SilvaKim, MinkyuMinkyuKimCoughlan, ConorConorCoughlanMalik, DharmanderDharmanderMalikBerciano, MathiasMathiasBercianoLepage, GuyGuyLepageLoo, RogerRogerLooKobbi, HakimHakimKobbiSar, HuseyinHuseyinSarBipul, SwetanshuSwetanshuBipulMarchese, ChiaraChiaraMarcheseVerheyen, PeterPeterVerheyenDe Heyn, PeterPeterDe HeynVelenis, DimitriosDimitriosVelenisChakrabarti, MaumitaMaumitaChakrabartiFerraro, FilippoFilippoFerraroBan, YoojinYoojinBanSingh, NishantNishantSinghOssieur, PeterPeterOssieurVan Campenhout, JorisJorisVan Campenhout2026-05-282026-05-282025979-8-3315-9532-6nahttps://imec-publications.be/handle/20.500.12860/59448We present a C-band GeSi EAM fabricated on a 300mm silicon photonics platform, exhibiting a bandwidth beyond 110 GHz. Transmission of 200, 212.5 and 224 GBaud PAM-4 is demonstrated, meeting the 25% OH SD-FEC threshold, highlighting the device's potential for next-generation optical scale-up fabrics.engProceedings paper10.1109/ecoc66593.2025.11262984WOS:001680185000062