Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activation

Ioannou-Sougleridis, VassiliosVassiliosIoannou-SougleridisPoulakis, NikolaosNikolaosPoulakisDimitrakis, PanagiotisPanagiotisDimitrakisNormand, PascalPascalNormandPatsis, GeorgeGeorgePatsisDimoulas, AthanasiosAthanasiosDimoulasSimoen, EddyEddySimoen2021-10-212021-10-2120130038-1101https://imec-publications.be/handle/20.500.12860/22525Room temperature analysis of Ge p+/n diodes reverse characteristics fabricated by platinum assisted dopant activationJournal article