Characterization of ultrathin high-k HfO2 layers grown on silicon: influence of the deposition parameters and interfacial layer

Houssiau, L.L.HoussiauVitchev, R.G.R.G.VitchevPireaux, J.-J.J.-J.PireauxConard, ThierryThierryConardBender, HugoHugoBender2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9068Characterization of ultrathin high-k HfO2 layers grown on silicon: influence of the deposition parameters and interfacial layerOral presentation