TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer

Xie, QiQiXieMusschoot, JanJanMusschootSchaekers, MarcMarcSchaekersCaymax, MattyMattyCaymaxDelabie, AnneliesAnneliesDelabieLin, DennisDennisLinQu, Xin-PingXin-PingQuJiang, Yu-LongYu-LongJiangVan den Berghe, SvenSvenVan den BergheDetavernier, ChristopheChristopheDetavernier2021-10-192021-10-1920111099-0062https://imec-publications.be/handle/20.500.12860/20163TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layerJournal article