Simulation of the phosphorus profiles in a c-Si solar cell fabricated using POCl3 diffusion or ion implantation and annealing

Florakis, AntoniosAntoniosFlorakisJanssens, TomTomJanssensPosthuma, NielsNielsPosthumaDelmotte, JorisJorisDelmotteDouhard, BastienBastienDouhardPoortmans, JefJefPoortmansVandervorst, WilfriedWilfriedVandervorst2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22354Simulation of the phosphorus profiles in a c-Si solar cell fabricated using POCl3 diffusion or ion implantation and annealingProceedings paperhttp://www.sciencedirect.com/science/article/pii/S1876610213013623