MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement

Zhao, MingMingZhaoLiang, HuHuLiangKandaswamy, Prem KumarPrem KumarKandaswamyVan Hove, MarleenMarleenVan HoveVenegas, RafaelRafaelVenegasVrancken, EviEviVranckenFavia, PaolaPaolaFaviaVanderheyden, AnneliesAnneliesVanderheydenVanhaeren, DanielleDanielleVanhaerenSaripalli, YogaYogaSaripalliDecoutere, StefaanStefaanDecoutereLanger, RobertRobertLanger2021-10-232021-10-2320161610-1634https://imec-publications.be/handle/20.500.12860/27666MOCVD growth of DH-HEMT buffers with low-temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancementJournal articlehttp://onlinelibrary.wiley.com/doi/10.1002/pssc.201510280/abstract