On the relation between low-temperature epitaxial growth conditions and the surface morphology of epitaxial Si and Si1-xGex layers, grown in an ultrahigh vacuum, very low pressure chemical vapour deposition reactor

Caymax, MattyMattyCaymaxPoortmans, JefJefPoortmansVan Ammel, AnnemieAnnemieVan AmmelVanhellemont, JanJanVanhellemontLibezny, MilanMilanLibeznyNijs, JohanJohanNijsMertens, RobertRobertMertens2021-09-292021-09-291994https://imec-publications.be/handle/20.500.12860/72On the relation between low-temperature epitaxial growth conditions and the surface morphology of epitaxial Si and Si1-xGex layers, grown in an ultrahigh vacuum, very low pressure chemical vapour deposition reactorJournal article