AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime prediction

Ma, J.J.MaZhang, W.W.ZhangZhang, J.F.J.F.ZhangJi, Z.Z.JiBenbakhti, B.B.BenbakhtiFranco, JacopoJacopoFrancoMitard, JeromeJeromeMitardWitters, LiesbethLiesbethWittersCollaert, NadineNadineCollaertGroeseneken, GuidoGuidoGroeseneken2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25587AC NBTI of Ge pMOSFETs: impact of energy alternating defects on lifetime predictionProceedings paper