Epitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integration

Loo, RogerRogerLooJourdain, AnneAnneJourdainRengo, GianlucaGianlucaRengoPorret, ClémentClémentPorretHikavyy, AndriyAndriyHikavyyLiebens, MaartenMaartenLiebensBecker, LucasLucasBeckerStorck, PeterPeterStorckBeyer, GeraldGeraldBeyerBeyne, EricEricBeyne2021-10-292021-10-292020-07https://imec-publications.be/handle/20.500.12860/35501Epitaxial growth of active Si on top of SiGe etch stop layer in view of 3D device integrationMeeting abstracthttps://ecs.confex.com/ecs/prime2020/meetingapp.cgi/Paper/137070