Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS

Gupta, SomyaSomyaGuptaSimoen, EddyEddySimoenVrielinck, HenkHenkVrielinckMerckling, ClementClementMercklingVincent, BenjaminBenjaminVincentGencarelli, FedericaFedericaGencarelliLoo, RogerRogerLooHeyns, MarcMarcHeyns2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22444Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTSProceedings paperhttp://ecst.ecsdl.org/content/53/1/251.full.pdf+html