Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation

Schoenaers, BenBenSchoenaersLeonhardt, AlessandraAlessandraLeonhardtNalin Mehta, AnkitAnkitNalin MehtaStesmans, AndreAndreStesmansChiappe, DanieleDanieleChiappeAsselberghs, IngeIngeAsselberghsRadu, IulianaIulianaRaduHuyghebaert, CedricCedricHuyghebaertDe Gendt, StefanStefanDe GendtHoussa, MichelMichelHoussaAfanas'ev, Valeri V.Valeri V.Afanas'ev2021-10-292021-10-2920202162-8769https://imec-publications.be/handle/20.500.12860/35912Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formationJournal articlehttps://iopscience.iop.org/article/10.1149/2162-8777/ab8363