Atomic layer deposition of hafnium based gate dielectric layers for CMOS applications

Delabie, AnneliesAnneliesDelabieNyns, LauraLauraNynsBellenger, FlorenceFlorenceBellengerCaymax, MattyMattyCaymaxConard, ThierryThierryConardFranquet, AlexisAlexisFranquetHoussa, MichelMichelHoussaLin, DennisDennisLinMeuris, MarcMarcMeurisRagnarsson, Lars-AkeLars-AkeRagnarssonSioncke, SonjaSonjaSionckeSwerts, JohanJohanSwertsFedorenko, YaninaYaninaFedorenkoMaes, JanJanMaesVan Elshocht, SvenSvenVan ElshochtDe Gendt, StefanStefanDe Gendt2021-10-162021-10-162007https://imec-publications.be/handle/20.500.12860/12037Atomic layer deposition of hafnium based gate dielectric layers for CMOS applicationsProceedings paper