Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodes

Menou, NicolasNicolasMenouPopovici, Mihaela IoanaMihaela IoanaPopoviciClima, SergiuSergiuClimaOpsomer, KarlKarlOpsomerPolspoel, WouterWouterPolspoelKaczer, BenBenKaczerRampelberg, GeertGeertRampelbergTomida, KazuyukiKazuyukiTomidaPawlak, MalgorzataMalgorzataPawlakDetavernier, ChristopheChristopheDetavernierPierreux, DieterDieterPierreuxSwerts, JohanJohanSwertsMaes, Jan WillemJan WillemMaesManger, DirkDirkMangerBadylevich, MMBadylevichAfanasiev, ValeriValeriAfanasievConard, ThierryThierryConardFavia, PaolaPaolaFaviaBender, HugoHugoBenderBrijs, BertBertBrijsVandervorst, WilfriedWilfriedVandervorstVan Elshocht, SvenSvenVan ElshochtPourtois, GeoffreyGeoffreyPourtoisWouters, DirkDirkWoutersBiesemans, SergeSergeBiesemansKittl, JorgeJorgeKittl2021-10-182021-10-1820090021-8979https://imec-publications.be/handle/20.500.12860/15850Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodesJournal article