Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate length

Collaert, NadineNadineCollaertvon Arnim, KlausKlausvon ArnimRooyackers, RitaRitaRooyackersVandeweyer, TomTomVandeweyerMercha, AbdelkarimAbdelkarimMerchaParvais, BertrandBertrandParvaisWitters, LiesbethLiesbethWittersNackaerts, AxelAxelNackaertsAltamirano Sanchez, EfrainEfrainAltamirano SanchezDemand, MarcMarcDemandHikavyy, AndriyAndriyHikavyyDemuynck, StevenStevenDemuynckDevriendt, KatiaKatiaDevriendtBauer, F.F.BauerFerain, IsabelleIsabelleFerainVeloso, AnabelaAnabelaVelosoDe Meyer, KristinKristinDe MeyerBiesemans, SergeSergeBiesemansJurczak, GosiaGosiaJurczak2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13548Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate lengthProceedings paper