Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

Alaei, MojtabaMojtabaAlaeiBorga, MatteoMatteoBorgaFabris, ElenaElenaFabrisDecoutere, StefaanStefaanDecoutereLauwaert, JohanJohanLauwaertBakeroot, BenoitBenoitBakeroot2025-04-242024-09-092025-04-2420240018-9383WOS:001303406800001https://imec-publications.be/handle/20.500.12860/44441Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN DopingJournal article10.1109/TED.2024.3446488WOS:001303406800001AVALANCHE BREAKDOWN VOLTAGETHRESHOLD VOLTAGEDENSITY