Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETs

Martino, J.A.J.A.MartinoRafi, Joan MarcJoan MarcRafiMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9278Temperature influence on the generation lifetime determination based on drain current transients in partially depleted SOI nMOSFETsProceedings paper