How to report and benchmark emerging field-effect transistors

Cheng, ZhihuiZhihuiChengPang, Chin-ShengChin-ShengPangWang, PeiqiPeiqiWangLe, Son T.Son T.LeWu, YanqingYanqingWuShahrjerdi, DavoodDavoodShahrjerdiRadu, IulianaIulianaRaduLemme, Max C.Max C.LemmePeng, Lian-MaoLian-MaoPengDuan, XiangfengXiangfengDuanChen, ZhihongZhihongChenAppenzeller, JoergJoergAppenzellerKoester, Steven J.Steven J.KoesterPop, EricEricPopFranklin, Aaron D.Aaron D.FranklinRichter, Curt A.Curt A.Richter2023-01-032022-08-102023-01-0320222520-1131WOS:000833024400002https://imec-publications.be/handle/20.500.12860/40238How to report and benchmark emerging field-effect transistorsJournal article10.1038/s41928-022-00798-8WOS:000833024400002MOS2 TRANSISTORSMETALEXTRACTION