On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO2/SiO2 gate stack

Maji, D.D.MajiCrupi, F.F.CrupiGiusi, G.G.GiusiPace, C.C.PaceSimoen, EddyEddySimoenClaeys, CorCorClaeysRao, V.R.V.R.Rao2021-10-172021-10-1720080003-6951https://imec-publications.be/handle/20.500.12860/14103On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO2/SiO2 gate stackJournal article