Role of landing energy in e-beam metrology of thin photoresist for high-numerical aperture extreme ultraviolet lithography

Zidan, MohamedMohamedZidanFischer, DanielDanielFischerSeveri, JorenJorenSeveriDe Simone, DaniloDaniloDe SimoneMoussa, AlainAlainMoussaMullender, AngelikaAngelikaMullenderMack, ChrisChrisMackCharley, Anne-LaureAnne-LaureCharleyLeray, PhilippePhilippeLerayDe Gendt, StefanStefanDe GendtLorusso, GianGianLorusso2024-01-222024-01-082024-01-2220231932-5150WOS:001122013100016https://imec-publications.be/handle/20.500.12860/43360Role of landing energy in e-beam metrology of thin photoresist for high-numerical aperture extreme ultraviolet lithographyJournal article10.1117/1.JMM.22.2.021002WOS:001122013100016