Relation between stress-induced leakage current and time-dependent dielectric breakdown in ultra-thin gate oxides

Houssa, MichelMichelHoussaMertens, PaulPaulMertensHeyns, MarcMarcHeyns2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3521Relation between stress-induced leakage current and time-dependent dielectric breakdown in ultra-thin gate oxidesJournal article