In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETs

Andrieu, F.F.AndrieuErnst, T.T.ErnstRavit, ClaireClaireRavitJurczak, GosiaGosiaJurczakGibaudo, G.G.GibaudoDeleonibus, S.S.Deleonibus2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10018In-depth characterization of the hole mobility in 50-nm process-induced strained MOSFETsJournal article