Heterostructures by inserting oxygen monolayers in Si: 2D nanolattice growth, electronic properties and MOSFET device characteristics

Jayachandran, SuseendranSuseendranJayachandranMartens, KoenKoenMartensLu, AugustinAugustinLuNishio, KengoKengoNishioPourtois, GeoffreyGeoffreyPourtoisDelabie, AnneliesAnneliesDelabieCaymax, MattyMattyCaymaxHeyns, MarcMarcHeyns2021-10-222021-10-222015https://imec-publications.be/handle/20.500.12860/25428Heterostructures by inserting oxygen monolayers in Si: 2D nanolattice growth, electronic properties and MOSFET device characteristicsMeeting abstract