Low-frequency noise investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect-Transistors with different gate length and orientation

Takakura, KenichiroKenichiroTakakuraPutcha, VamsiVamsiPutchaSimoen, EddyEddySimoenAlian, AliRezaAliRezaAlianPeralagu, UthayasankaranUthayasankaranPeralaguWaldron, NiamhNiamhWaldronParvais, BertrandBertrandParvaisCollaert, NadineNadineCollaert2021-10-292021-10-2920200018-9383https://imec-publications.be/handle/20.500.12860/36045Low-frequency noise investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect-Transistors with different gate length and orientationJournal articlehttps://ieeexplore.ieee.org/document/9127093