Vandemaele, MichielMichielVandemaeleVaisman Chasin, AdrianAdrianVaisman ChasinFranco, JacopoJacopoFrancoTyaginov, StanislavStanislavTyaginovClaes, DieterDieterClaesMertens, HansHansMertensDe Keersgieter, AnAnDe KeersgieterHellings, GeertGeertHellingsKaczer, BenBenKaczer2026-09-142026-09-142026979-8-3315-8972-11541-7026https://imec-publications.be/handle/20.500.12860/60348We model experimental NanoWire (NW) nFET I-V aging under Bias Temperature Instability (BTI) and Hot-Carrier (HC) stress using our compact physics-aware framework ComphU. We introduce a new simplified and computationally efficient approach to Distribution Function (DF) modeling applicable for short- Lg FETs and successfully lump the time- 0 variability into a limited parameter set. Our model describes experimental ΔVth (t) and ΔId,on (t) traces well. Using the calibrated model, we find that i) the intrinsic time- 0gm, max is 39 % higher than the extrinsic one, ii) aging outside the calibration region is predicted reasonably, and that the BTI lifetime iii) roughly doubles for every 0.1 V reduction in the supply voltage and iv) increases up to 6.3× for every 0.1 V increase in Vth, 0.engProceedings paper10.1109/irps61424.2026.11499204WOS:001844475300050FRAMEWORKIMPACT