Bock, KarlheinzKarlheinzBockKeppens, BartBartKeppensDe Heyn, VincentVincentDe HeynGroeseneken, GuidoGuidoGroesenekenChing, L. Y.L. Y.ChingNaem, AbdallaAbdallaNaem2021-10-062021-10-061999https://imec-publications.be/handle/20.500.12860/3240Influence of gate length on ESD performance for deep submicron CMOS technologyProceedings paper