O'Connor, RobertRobertO'ConnorChang, VincentVincentChangPantisano, LuigiLuigiPantisanoRagnarsson, Lars-AkeLars-AkeRagnarssonAoulaiche, MarcMarcAoulaicheO'Sullivan, BarryBarryO'SullivanAdelmann, ChristophChristophAdelmannVan Elshocht, SvenSvenVan ElshochtLehnen, PeerPeerLehnenYu, HongYuHongYuYuGroeseneken, GuidoGuidoGroeseneken2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14236Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 cappingProceedings paper