Tensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devices

Lieten, RubenRubenLietenMaeda, TatsuroTatsuroMaedaJevasuwan, WipakornWipakornJevasuwanHattori, HiroyukiHiroyukiHattoriUchida, NoriyukiNoriyukiUchidaMiura, ShuShuMiuraTanaka, MasatoshiMasatoshiTanakaSeo, Jin WonJin WonSeoLocquet, Jean-PierreJean-PierreLocquet2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22698Tensile strained GeSn on Si by solid phase epitaxy and fabrication of high mobility FET devicesProceedings paper