Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al2O3 Capping Layer and TiN Gate

Wang, DanghuiDanghuiWangZheng, JunnaJunnaZhengZhang, YangYangZhangXu, TianhanTianhanXuSimoen, EddyEddySimoenGovoreanu, BogdanBogdanGovoreanuClaeys, CorCorClaeys2022-07-072021-12-162022-07-0720210018-9383WOS:000724501000013https://imec-publications.be/handle/20.500.12860/38617Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al2O3 Capping Layer and TiN GateJournal article10.1109/TED.2021.3118660WOS:000724501000013MOSFET PARAMETER EXTRACTIONTHRESHOLD VOLTAGECMOS TECHNOLOGYDEGRADATIONDC