Preliminary reliability at 50 V of State-of-the-art RF power GaN-on-Si HEMTs

Medjdoub, FaridFaridMedjdoubMarcon, DenisDenisMarconDas, JoJoDasDerluyn, JoffJoffDerluynCheng, KaiKaiChengDegroote, StefanStefanDegrooteGermain, MarianneMarianneGermainDecoutere, StefaanStefaanDecoutere2021-10-182021-10-182010https://imec-publications.be/handle/20.500.12860/17608Preliminary reliability at 50 V of State-of-the-art RF power GaN-on-Si HEMTsProceedings paper