HBM ESD robustness of GaN-on-Si Schottky diodes

Chen, Shih-HungShih-HungChenGriffoni, AlessioAlessioGriffoniSrivastava, PuneetPuneetSrivastavaLinten, DimitriDimitriLintenThijs, StevenStevenThijsScholz, MirkoMirkoScholzMarcon, DenisDenisMarconGallerano, A.A.GalleranoLafonteese, D.D.LafonteeseConcannon, A.A.ConcannonVashchenko, V.A.V.A.VashchenkoHopper, P.P.HopperBychikhin, S.S.BychikhinPogany, D.D.PoganyVan Hove, MarleenMarleenVan HoveDecoutere, StefaanStefaanDecoutereGroeseneken, GuidoGuidoGroeseneken2021-10-202021-10-2020121530-4388https://imec-publications.be/handle/20.500.12860/20439HBM ESD robustness of GaN-on-Si Schottky diodesJournal article