Interface defects of the new type detected by the noise method in SOI and SOS MOSFETs

Lukyanchikova, N.N.LukyanchikovaPetrichuk, M.M.PetrichukGarbar, N.N.GarbarSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/2006Interface defects of the new type detected by the noise method in SOI and SOS MOSFETsProceedings paper