Structural characterization of N-face GaN epilayers grown on Ge (111) by plasma assisted molecular beam epitaxy

Zhang, LiyangLiyangZhangLieten, RubenRubenLietenZhu, TongtongTongtongZhuLeys, MaartenMaartenLeysJiang, SijiaSijiaJiangBorghs, GustaafGustaafBorghs2021-10-212021-10-2120131466-8033https://imec-publications.be/handle/20.500.12860/23446Structural characterization of N-face GaN epilayers grown on Ge (111) by plasma assisted molecular beam epitaxyJournal article10.1039/C3CE41836G