Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors

Rafi, Joan MarcJoan MarcRafiMercha, AbdelkarimAbdelkarimMerchaSimoen, EddyEddySimoenHayama, KiyoteruKiyoteruHayamaClaeys, CorCorClaeys2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9489Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistorsJournal article