Asanovski, RubenRubenAsanovskiRinaudo, PietroPietroRinaudoVaisman Chasin, AdrianAdrianVaisman ChasinZhao, YingYingZhaoDekkers, HaroldHaroldDekkersvan Setten, MichielMichielvan SettenMatsubayashi, DaisukeDaisukeMatsubayashiRassoul, NouredineNouredineRassoulBelmonte, AttilioAttilioBelmonteKar, Gouri SankarGouri SankarKarKaczer, BenBenKaczerFranco, JacopoJacopoFranco2026-07-242026-07-2420260741-3106https://imec-publications.be/handle/20.500.12860/59972We investigate the origin of negative threshold voltage shifts in back-gated amorphous IGZO TFTs under positive bias and high temperature stress. Combined DC and 1/f noise measurements reveal that the stress does not generate new dielectric traps but instead broadens the IGZO conduction band tail states. A recovery experiment confirms that the associated threshold voltage, subthreshold swing, and noise degradation are reversible. Simulations using an in-house Poisson solver confirm the experimental observations that high-temperature stress increases hydrogen doping and the density of sub-gap states.engJournal article10.1109/led.2026.3675648WOS:001756806400019LOW-FREQUENCY NOISE