Hikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooWitters, LiesbethLiesbethWittersTakeoka, ShinjiShinjiTakeokaGeypen, JefJefGeypenBrijs, BertBertBrijsMerckling, ClementClementMercklingCaymax, MattyMattyCaymaxDekoster, JohanJohanDekoster2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/15480SiGe SEG growth for buried channels p-MOS devicesMeeting abstract