The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Wu, Tian-LiTian-LiWuMarcon, DenisDenisMarconDe Jaeger, BriceBriceDe JaegerVan Hove, MarleenMarleenVan HoveBakeroot, BenoitBenoitBakerootLin, DennisDennisLinStoffels, SteveSteveStoffelsKang, XuanwuXuanwuKangRoelofs, RobinRobinRoelofsGroeseneken, GuidoGuidoGroesenekenDecoutere, StefaanStefaanDecoutere2021-10-232021-10-232015https://imec-publications.be/handle/20.500.12860/26192The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrateProceedings paperhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7123430