Investigation of low temperature epitaxial SiGe:P in view of source/drain application for 5nm technology node and below.

Hikavyy, AndriyAndriyHikavyyPorret, ClémentClémentPorretVohra, AnuragAnuragVohraAyyad, MustafaMustafaAyyadDouhard, BastienBastienDouhardLoo, RogerRogerLoo2021-10-282021-10-282020https://imec-publications.be/handle/20.500.12860/35276Investigation of low temperature epitaxial SiGe:P in view of source/drain application for 5nm technology node and below.Proceedings paperhttps://iopscience.iop.org/article/10.1149/09805.0043ecst