Curado, M. A.M. A.CuradoTeixeira, J. P.J. P.TeixeiraMonteiro, M.M.MonteiroRibeiro, E. F. M.E. F. M.RibeiroVilao, R. C.R. C.VilaoAlberto, H. V.H. V.AlbertoCunha, J. M. V.J. M. V.CunhaSousa Lopes, TomasTomasSousa LopesOliveira, K.K.OliveiraDonzel-Gargand, O.O.Donzel-GargandHultqvist, A.A.HultqvistCalderon, S.S.CalderonBarreiros, M. A.M. A.BarreirosChiappim, W.W.ChiappimLeitao, J. P.J. P.LeitaoSilva, A. G.A. G.SilvaProkscha, T.T.ProkschaVinhais, C.C.VinhaisFernandes, P. A.P. A.FernandesSalome, P. M. P.P. M. P.Salome2021-12-162021-11-022021-12-1620202352-9407WOS:000599825600011https://imec-publications.be/handle/20.500.12860/38327Journal article10.1016/j.apmt.2020.100867WOS:000599825600011REAR SURFACE PASSIVATIONATOMIC-LAYER-DEPOSITIONTHIN-FILMSPOSTDEPOSITION TREATMENTINTERFACE PASSIVATIONLOW-TEMPERATUREBUFFER LAYERSPOINT-CONTACTCDS BUFFEREFFICIENCY