Bhowmik, TrishaTrishaBhowmikXiang, YangYangXiangGama Monteiro Junior, MaxwelMaxwelGama Monteiro JuniorRao, SiddharthSiddharthRaoGarcia Redondo, FernandoFernandoGarcia RedondoVan Houdt, JanJanVan HoudtTemst, KristiaanKristiaanTemst2026-09-142026-09-142025979-8-3315-4884-1https://imec-publications.be/handle/20.500.12860/60330Spin orbit torque (SOT)-based magnetic tunneling junction (MTJ) switching is central to magnetic random-access memories (MRAMs) where additional physical effects such as domain wall (DW) motion often coexist. This work provides an analytical framework for Dzyaloshinski-Moriya-Interaction (DMI)-induced DW propagation in confined MTJ structures using the Euler-Lagrange variational approach. We highlight the key implication of varying DW length in confined MTJs and propose a pseudo-steady-state solution for estimating the DW velocity. Our model is verified by micromagnetic simulations across a wide range of parameter space and thus sets up a solid foundation towards circuit-compatible SOT-MRAM compact models.engModeling SOT-Driven Domain Wall Motion in MTJ SwitchingProceedings paper10.1109/sispad66650.2025.11186379WOS:001846246700079