Interface properties improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 gate stacks using molecular beam deposition

Bellenger, FlorenceFlorenceBellengerMerckling, ClementClementMercklingPenaud, J.J.PenaudHoussa, MichelMichelHoussaCaymax, MattyMattyCaymaxMeuris, MarcMarcMeurisDe Meyer, KristinKristinDe MeyerHeyns, MarcMarcHeyns2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13366Interface properties improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 gate stacks using molecular beam depositionMeeting abstract