Radiation tolerance of Si1-yCy source/drain n-MOSFETs with different carbon concentrations

Asai, YukiYukiAsaiHori, MasatoMasatoHoriYoneda, MasashiMasashiYonedaTsunoda, IsaoIsaoTsunodaTakakura, KenichiroKenichiroTakakuraBargallo Gonzalez, MireiaMireiaBargallo GonzalezSimoen, EddyEddySimoenClaeys, CorCorClaeysYoshino, KenjiKenjiYoshino2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/21993Radiation tolerance of Si1-yCy source/drain n-MOSFETs with different carbon concentrationsProceedings paper