Threshold voltage control in PMOSFETs with polysilicon or fully-Silicided gates on Hf-based gate dielectric using controlled lateral oxidation

Kaushik, VidyaVidyaKaushikRohr, ErikaErikaRohrHyun, S.S.HyunDe Gendt, StefanStefanDe GendtVan Elshocht, SvenSvenVan ElshochtDelabie, AnneliesAnneliesDelabieEveraert, Jean-LucJean-LucEveraertVeloso, AnabelaAnabelaVelosoBrus, StephanStephanBrusRagnarsson, Lars-AkeLars-AkeRagnarssonRichard, OlivierOlivierRichardCaymax, MattyMattyCaymaxHeyns, MarcMarcHeyns2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10684Threshold voltage control in PMOSFETs with polysilicon or fully-Silicided gates on Hf-based gate dielectric using controlled lateral oxidationProceedings paper