Physical-based RTN modeling of ring oscillators in 40-nm SiON and 28-nm HKMG by bimodal defect-centric behaviors

Oshima, AzusaAzusaOshimaKobayashi, KazutoshiKazutoshiKobayashiKishida, RyoRyoKishidaKomawako, TakuyaTakuyaKomawakoWeckx, PieterPieterWeckxKaczer, BenBenKaczerMatsumoto, TakashiTakashiMatsumotoOnodera, HidetoshiHidetoshiOnodera2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27099Physical-based RTN modeling of ring oscillators in 40-nm SiON and 28-nm HKMG by bimodal defect-centric behaviorsProceedings paperhttp://ieeexplore.ieee.org/document/7605213/