Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rate

Nguyen, DuyDuyNguyenLoo, RogerRogerLooCaymax, MattyMattyCaymax2021-10-172021-10-1720080169-4332https://imec-publications.be/handle/20.500.12860/14216Low-temperature chemical vapor deposition of highly doped n-type epitaxial Si at high growth rateJournal articleDOI : 10.1016/j.apsusc.2008.02.194